Characterization and modeling of advanced charge trapping non volatile memories / Caractérisation et Modélisation des Mémoires Avancées non Volatiles à Piégeage de Charge
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Tác giả chưa xác định. Characterization and modeling of advanced charge trapping non volatile memories / Caractérisation et Modélisation des Mémoires Avancées non Volatiles à Piégeage de Charge. Thesis, HAL - Pháp.
Việt Nam (chuẩn TCVN 5453:1991):
. Characterization and modeling of advanced charge trapping non volatile memories / Caractérisation et Modélisation des Mémoires Avancées non Volatiles à Piégeage de Charge. Thesis. HAL - Pháp. Truy cập từ .
Tóm tắt
The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and co...